The Advanced Epi Lab focuses on the growth of GaAs and InP-based compound semiconductor epitaxial wafers by using metalorganic chemical vapour deposition (MOCVD) technology for the needs of large-scale epitaxial wafers in the fields of wireless communication, optical fiber communication, and 3D sensing.The research and development of the laboratory is aimed at 6" GaAs heterojunction bipolar transistor (HBT) and pseudomorphic high-electron-mobility transistor (pHEMT), 6" GaAs vertical-cavity surface-emitting laser (VCSEL) lasers, 4" GaAs high power lasers, 2" and 3" InP lasers and detectors, as well as custom epitaxial wafers for research and enterprise applications.