AIX_2800G4-TM For GaAs and InP

Manufacturer:Aixtron

Model:2800G4-TM

Performance specification:

Highest device yield & throughput  

High precursor & hydride efficencies  

Lowest cost/wafer   

Flexible configuration for 2 to 6 inch

Automated satellite loading

Triple gas injector

Latest reactor design featuring  

Advanced process tuning 

Increased process robustness 

Introduction

The Planetary Reactor  is based on the principle of a horizontal laminar flow reactor. This ensures the sharpest transitions between different materials and incomparable control of the deposition rates in the area of individual atomic layers. The combination of this principle with the multiple rotation of substrate carriers ensures that the deposition takes place with excellent homogeneity regarding layer thickness, composition and doping. In addition, the special reactor inlet, which allows the separation of some gases, ensures an even radial flow to the outside with an optimally adjustable distribution.